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Magnetophotoluminescence of GaN/AlxGa1-xN quantum wells: Valence band reordering and excitonic binding energies

机译：GaN / AlxGa1-xN量子阱的磁光致发光：价带重排和激子结合能

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Shields, PA; Nicholas, RJ; Grandjean, N; Massies, J;
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年度 2001
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1. Magnetophotoluminescence of GaN/AlxGa1-xN quantum wells: Valence band reordering and excitonic binding energies - art. no. 245319 [J] . Shields PA., Grandjean N., Massies J., Physical Review, B. Condensed Matter . 2001,第24期

机译：GaN / AlxGa1-xN量子阱的磁光致发光：价带重排和激子结合能-艺术。没有。 245319
2. Pressure-dependent reordering of valence band states in GaN/Al_xGa_(1-x)N quantum wells [J] . W. Bardyszewski, S. P. Lepkowski Physical review . 2012,第3期

机译：GaN / Al_xGa_（1-x）N量子阱中价带态的压力依赖性重排
3. Binding energies and photoionization cross-sections of donor impurities in GaN/AlxGa1-xN spherical quantum dot under hydrostatic pressure [J] . Modern Physics Letters, B. Condensed Matter Physics, Statistical Physics, Applied Physics . 2020,第14期

机译：静压压力下GaN / Alxga1-XN球形量子点中供体杂质的结合能量和光离子横截面
4. Conduction band-valence band coupling effects on the band structure of In0.28Ga0.72N/GaN Quantum Well [C] . Biswas Saumya, Mahbub Ifana, Islam Md.Shofiqul Spanish Conference on Electron Devices . 2013

机译：导带价带耦合对In0.28Ga0.72N / GaN量子阱能带结构的影响
5. Spectroscopic study of hafnium silicate alloys prepared by RPECVD: Comparisons between conduction/valence band offset energies and optical band gaps. [D] . Hong, Joon Goo. 2004

机译：RPECVD制备的硅酸alloy合金的光谱研究：导带/价带偏移能和光学带隙的比较。
6. Effect of Eu-implantation and annealing on the GaN quantum dots excitonic recombination [O] . Marco Peres, Sérgio Magalhães, Vincent Fellmann, 2011

机译：Eu注入和退火对GaN量子点激子复合的影响
7. Magnetophotoluminescence of GaN/AlxGa1-xN quantum wells: Valence band reordering and excitonic binding energies [O] . Shields, P.A., Nicholas, R.J., Grandjean, N., 2001

机译：GaN / AlxGa1-xN量子阱的磁光致发光：价带重排和激子结合能

Magnetophotoluminescence of GaN/AlxGa1-xN quantum wells: Valence band reordering and excitonic binding energies

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